Gallium Nitride (GaN) nanowires mapping
Photoluminescence (or PL) and Raman are spectroscopy techniques providing information on optical and electrical properties of semiconductors and many nano-materials.
A Raman / PL microscope is a laser based instrument able to map nanostructures down to 250nm spatial resolution, but since it is a spectroscopy technique, it is also able to observe features that are much smaller, based on the chemical signature. Carbon Nanotubes are a very common example of such nanostructures of nanometer or sub-nanometer size that can be observed.
HORIBA Jobin Yvon mapping systems such as the LabRAM HR or LabRAM ARAMIS are used to image these small features
Raman and Photoluminescence Mapping systems from HORIBA Jobin Yvon are used for research or production environments, and can be fitted with temperature controlled cells (LN2 or He cryostats) to measure photoluminescence emission at low temperature.
Pictures. Top: Gallium Nitride (GaN) nanowire AFM image. Left: Gallium Nitride (GaN) nanowire Raman polarization images. The nanowire is 150nm in diameter.
Silicon (Si) nanowire mapping 
Raman spectroscopy and Photoluminescence are great tools to determine crystallinity, crystallographic orientation of nano-structures.
Picture: Silicon (Si) nanowire Raman image . The nanowire is about 200nm in diameter.
This work is related to the following instruments and applications:
